FQU17P06 datasheet, mosfet equivalent, Fairchild Semiconductor

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FQU17P06 Features and benefits

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* -12A, -60V, RDS(on) = 0.135Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tes.

FQU17P06 Application

such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operate.

FQU17P06 Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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